Glossary

Drain-induced barrier lowering (DIBL)

Beginner

In very tiny transistors, the voltage at the far end helps open the switch a little, so it leaks more when off.

Novice

In a short channel the drain is close enough to the source that its voltage lowers the energy barrier the gate is supposed to control. The threshold voltage falls as VDSV_{\mathrm{DS}} rises, raising both on-current and leakage.

Expert

Modeled as Vt=Vt0−ηVDSV_{\mathrm{t}} = V_{\mathrm{t0}} - \eta V_{\mathrm{DS}}, with η\eta (DIBL) quoted in mV/V. On a log IDI_{\mathrm{D}}–VGSV_{\mathrm{GS}} plot it shows as a sideways shift between low-VDSV_{\mathrm{DS}} and high-VDSV_{\mathrm{DS}} curves, and it multiplies off-current by 10ηΔVDS/S10^{\eta \Delta V_{\mathrm{DS}}/S}.