Glossary

Square-law (Shockley) model

Beginner

The simplest textbook rule for a transistor: push the gate twice as far past its tipping point and four times as much current flows.

Novice

The classic first-order MOSFET model: zero current below threshold, ID=β(VGS−Vt−VDS/2)VDSI_{\mathrm{D}} = \beta(V_{\mathrm{GS}} - V_{\mathrm{t}} - V_{\mathrm{DS}}/2)V_{\mathrm{DS}} in the linear region and ID=(β/2)(VGS−Vt)2I_{\mathrm{D}} = (\beta/2)(V_{\mathrm{GS}} - V_{\mathrm{t}})^2 in saturation, where β\beta depends on the device size and the process.

Expert

Derived from the gradual-channel approximation with constant mobility. β=μCoxW/L\beta = \mu C_{\mathrm{ox}} W/L. It is SPICE Level 1. It works for long channels but overestimates drive current and its growth with VDDV_{\mathrm{DD}} in short ones, because it ignores velocity saturation and mobility degradation.