Glossary

Channel-length modulation (CLM)

Beginner

After the current levels off, it still creeps up a little as the push across the transistor grows.

Novice

As VDSV_{\mathrm{DS}} rises past saturation, the depleted region at the drain widens and the effective channel gets shorter, so a little more current flows. It is modeled as a factor (1+λVDS)(1 + \lambda V_{\mathrm{DS}}), where λ\lambda is fitted to measurements.

Expert

Leff=L−Ld(VDS)L_{\mathrm{eff}} = L - L_{\mathrm{d}}(V_{\mathrm{DS}}). Modeled as ID=(β/2)VGT2(1+λVDS)I_{\mathrm{D}} = (\beta/2)V_{\mathrm{GT}}^2(1 + \lambda V_{\mathrm{DS}}), λ=1/VA\lambda = 1/V_{\mathrm{A}} by analogy with the BJT Early voltage. It sets the finite output resistance ro≈1/(λID)r_{\mathrm{o}} \approx 1/(\lambda I_{\mathrm{D}}) and gets worse as L shrinks.

Explained in The I-V curve (Transistors).

See also: Output resistance (ro), Pinch-off.

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