Conductance drift
Beginner
Some memory cells slowly change their stored value over time, like ink fading.
Novice
A slow change in a programmed resistive memory cell’s conductance after it is written. If every cell drifts in the same way it can be corrected; differences between cells cause errors.
Expert
In PCM, from structural relaxation of the amorphous phase; RRAM shows a fast early “relaxation.” Global per-core rescaling fixes the mean; the spread in remains as error that grows with time.
Explained in Sparsity, in-memory and analog compute (Architectures).
See also: Phase-change memory (PCM).